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Resonant photoluminescence of InAs/GaAs quantum dots
Gorshkov A. P.
1, Shvartsman V. D.
1, Volkova N. S.
1, Cvetkov A. A.1, Plankina S. M.
1, Demina P. B.
1, Panfilov A. S.1
1Lobachevsky State University, Nizhny Novgorod, Russia
Email: GorshkovAP@mail.ru, shvartsman@unn.ru, volkovans88@mail.ru, Sasha_54625@mail.ru, plankina@phys.unn.ru, demina@phys.unn.ru, andreip4nfilov@gmail.com
Resonant photoluminescence of self-assembled InAs/GaAs quantum dots grown by metal-organic vapor-phase epitaxy at atmospheric pressure has been studied. Under excitation by a Nd:YAG laser (1.165 eV), narrow peaks at 1.059 and 1.049 eV appear, which are absent under above-barrier excitation. Temperature dependences and numerical modeling of selective excitation in a size-dispersed quantum dot ensemble were analyzed. It is shown that excitation via the first excited state does not explain the temperature stability of the resonant peaks. The results indicate laser absorption accompanied by the emission of three and four LO phonons. Keywords: quantum dots, indium arsenide, resonant photoluminescence, selective excitation, LO phonons.
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