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Printing thin-film transistors with a semiconductor channel based on indium-gallium-zinc oxide
Russian version
Ivanov V. V. 1, Kazarinova D. D. 1, Lizunova A. A. 1, Volkov I. A. 1, Vlasov I. S. 1, Kolisova E. V.1, Tsaplin I. A.1, Kornyushin D. V. 1, Voroshilova V. A. 1, Loshkarev A. A. 1
1Moscow Institute of Physics and Technology (National Research University), Dolgoprudny, Moscow Region, Russia
Email: ivanov.vv@mipt.ru, kazarinova.dd@mipt.ru, lizunova.aa@mipt.ru, volkov256@yandex.ru, kolisova.ev@phystech.edu, tsaplin.ia@phystech.edu, korniushin.d@mipt.ru, voroshilova.va@phystech.edu, alexloshkarev@ya.ru
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The influence of the electrode formation method, annealing atmosphere and route, gate dielectric thickness, and oxide semiconductor stoichiometry on the on-off current ratio (Ion/Ioff) of a transistor with an indium gallium zinc oxide (IGZO) semiconductor channel is analyzed. It is found that the transistor architecture with a lower gate and an upper pair of silver drain-source electrodes, formed by dry aerosol printing, allows increasing the charge mobility to 1.4 cm2/(V · s). A hybrid approach for fabricating the transistor functional layers is proposed, which involves forming the IGZO semiconductor channel by inkjet printing and silver drain-source contacts by dry aerosol printing. The developed approach ensures the production of transistors with Ion/Ioff up to 1.4·104 and a charge mobility up to 0.08 cm2/(V · s). Keywords: IGZO, thin-film transistor, dry aerosol printing, inkjet printing, post-processing.
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