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Atomic structure and optical properties of GeSi nanostructures obtained by implantation of Ge+ ions into silicon followed by thermal annealing
Smagina Zh.V.
1, Zinovyev V. A.
1, Zinovieva A. F.
1, Volodin V.A.
1,2, Aleksandrov I. A.
1, Gutakovskii A.K.1, Vdovin V. I.1, Mudryi A.V.
3, Zhivulko V.D.
3, Zakharov V. E.4, Fedina L.I.
1
1Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences, Novosibirsk, Russia
2Novosibirsk State University, Novosibirsk, Russia
3Scientific and Practical Materials Research Center, National Academy of Sciences of Belarus, Minsk, Belarus
4Institute for Physics of Microstructures, Russian Academy of Sciences, Nizhny Novgorod, Russia
2Novosibirsk State University, Novosibirsk, Russia
3Scientific and Practical Materials Research Center, National Academy of Sciences of Belarus, Minsk, Belarus
4Institute for Physics of Microstructures, Russian Academy of Sciences, Nizhny Novgorod, Russia
Email: smagina@isp.nsc.ru, zinoviev@isp.nsc.ru, aigul@isp.nsc.ru, volodin@isp.nsc.ru, aleksandrov@isp.nsc.ru, gut@isp.nsc.ru, vivdovin@isp.nsc.ru, fedina@isp.nsc.ru
A comparative analysis of the structure and optical properties of extended defects introduced by Ge+ ion implantation and subsequent annealing at T=500-800 oC into silicon layers in SOI structures and Si(100) wafers was performed. In both cases, up to 600 oC, extended 113 defects dominate in the structure of the implanted layers (with the proportion of 001 defects no more than ~5%). However, at T=700 oC, 001 defects become the main ones in Si wafers, and the geometric phase analysis of their HRTEM images reveals significant nano-fluctuations of elastic strains in the 001 plane of the defect, indicating a variation in its atomic structure and possible Ge segregation. In an SOI structure annealed at T=800 oC, both types of defects disappear according to photoluminescence (PL) data, but at T<800 oC, the PL spectra qualitatively reproduce the light emission features in the range of 1.2-1.6 μm in both cases. The obtained PL quenching activation energies indicate its lower thermal stability in the SOI structure compared to Si(100) wafer. Keywords: ion implantation, germanium, silicon on insulator, thermal annealing, high-resolution electron microscopy, 113 and 001 defects, photoluminescence.
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