Technical Physics Letters
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Formation of InPAs solid solutions by solid phase substitution method
Gagis G. S.
1, Kuchinskii V. I.1, Kazantsev D. Yu.
1, Ber B. Ya.
1, Tokarev M. V.
1, Vasil’ev V. I.
1
1Ioffe Institute, St. Petersburg, Russia
Email: gsgagis@mail.ioffe.ru, vladimir.kuch@mail.ioffe.ru, dukazantsev@mail.ioffe.ru, boris.ber@mail.ioffe.ru, mvtokarev@mail.ioffe.ru, giman@mail.ioffe.ru
The samples obtained by the method of solid phase substitution of the fifth group elements in InP with arsenic and in InAs with phosphorus during tau=30 and 70 min at temperatures t=585 and 655 oC are investigated. According to secondary ion mass spectrometry data, the elements of the fifth group penetrated to a depth of 100 nm. For InP, the amount and depth of penetration of arsenic at the same tau and t differed with different types of doping of the substrates. Keywords: Solid-phase substitution, indium arsenide, indium phosphide, zinc diffusion, secondary ion mass spectrometry.
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