Change in the surface level of germanium with the formation of a thin porous layer during irradiation with bismuth ions
Stepanov A. L.1, Rogov A.M.1, Sotnikova V.F.1, Valeev V.F.1, Nuzhdin V.I.1, Konovalov D.A.1
1Zavoisky Physical-Technical Institute, FRC Kazan Scientific Center of RAS, Kazan, Russia
Email: aanstep@gmail.com
In this work, the nature of changes in the surface level of a single-crystal c-Ge substrate irradiated by 209Bi++ ions with an energy of E=36 keV during the formation of thin surface nanoporous Ge layers with increasing ion dose was analyzed. Dose values varied from 2.0· 1014 to 4.0· 1016 ion/cm2. Observation of the surface sample morphology was carried out using high-resolution scanning electron and probe microscopy. It was found that at low doses of up to 1.0· 1015 ion/cm2, ion sputtering of the sample surface occurs, forming a layer consisting of open surface pores in the form of pits. With increasing dose, this layer is replaced by swelling of the surface with the formation of a porous spongy nanowires structure. Keywords: nanoporous germanium, ion-enhanced deposition, ion implantation.
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