Heterostructures with two-dimensional electron gas based on GaN with InAlN/AlGaN barrier
Arteev D. S.1, Sakharov A. V.1, Nikolaev A. E.1, Cherkashin N. A.2, Tsatsulnikov A. F.3
1Ioffe Institute, St. Petersburg, Russia
2CEMES-CNRS and Universite de Toulouse, Toulouse, France
3Submicron Heterostructures for Microelectronics, Research and Engineering Center, Russian Academy of Sciences, St. Petersburg, Russia
Email: ArteevDS@mail.ioffe.ru
The possibility of obtaining GaN-based heterostructures with composite InAlN/AlGaN barrier with a sheet resistance of ~220-230 Ω/sq. at room temperature by metalorganic vapor phase epitaxy, which is comparable to commercial structures with InAlN barriers, was experimentally demonstrated. Based on numerical calculations, it was shown that a significant reduction of the 2DEG mobility was due to alloy disorder potential scattering in the AlGaN layers. Keywords: gallium nitride, transistor, InAlN.
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