Voznyuk G. V.1, Grigorenko I. N.1, Lila A. S.1,2, Mitrofanov M. I.1, Babichev A. V.2, Smirnov A. N.1, Nikolaev D. N.1, Slipchenko S. O.1, Davydov V. Yu.1, Tsatsulnikov A. F.3, Evtikhiev V. P.1
1Ioffe Institute, St. Petersburg, Russia
2ITMO University, St. Petersburg, Russia
3Submicron Heterostructures for Microelectronics, Research and Engineering Center, Russian Academy of Sciences, St. Petersburg, Russia
Email: glebufa0@gmail.com
Raman spectroscopy was used to investigate lithographic patterns formed by a focused Ga+ ion beam in a GaAs/Al0.3Ga0.7As heterostructure. The results showed that radiation defects accumulate during etching, with their concentration dependent on ion energy and dose. By optimizing etching and annealing conditions, it is possible to restore the crystal perfection of the heterostructure. Keywords: Micro-Raman spectroscopy, focused ion beam, radiation-induced defects, heterostructure.
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