Strel’chuk A. M. 1, Kalinina E. V.1, Kudoiarov M. F. 1, Patrova M. Ya. 1
1Ioffe Institute, St. Petersburg, Russia
Email: anatoly.strelchuk@mail.ioffe.ru
The effect of irradiation with argon ions with an energy of 53 MeV in the dose range (1-7)·1010 cm-2 on the current-voltage characteristics of Cr/SiC(4H) Schottky diodes with an epitaxial layer doping level of ~1014-3·1015 cm-3 has been studied. In the characteristics of diodes both before and after irradiation, effects have been discovered and discussed that make it difficult to interpret the results, assess the radiation resistance of diodes and confirm the influence of epitaxial layer defects on the characteristics of diodes. An upper estimate of the threshold dose Dth (~6·10^9 cm-2) irradiation with Ar8+ ions with an energy of 53 MeV is given. Keywords: SiC, Schottky diode, Ar8+ irradiation, IV characteristics, shunts, defects.
- A.M. Strel'chuk, A.A. Lebedev, V.V. Kozlovski, N.S. Savkina, D.V. Davydov, V.V. Solov'ev, M.G. Rastegaeva. Nucl. Instrum. Meth. Phys. Res., B 147, 74 (1999)
- A.M. Strel'chuk, V.V. Kozlovsky, A.A. Lebedev. FTP, 52, 1651 (2018). (in Russian)
- E.V. Kalinina, M.F. Kudoyarov, I.P. Nikitina, E.V. Dement'eva, V.V. Zabrodsky. FTP, 56, 254 (2022). (in Russian)
- A.M. Strel'chuk, E.V. Kalinina. Nauch.-tekhn. vedomosti SPbGPU. Fiz.-mat. nauki, 16, 83 (2023). DOI: https://doi.org/10.18721/JPM.161.212
- D. Defives, O. Noblanc, C. Dua, C. Brylinski, M. Barthula, F. Meyer. Mater. Sci. Eng., B61-62, 395 (1999)
- D. Defives, O. Noblanc, C. Dua, C. Brylinski, M. Barthula, V. Aubry-Fortuna, F. Meyer. IEEE Trans. Electron Dev., 46, 449 (1999)
- M.L. Bolen, M.A. Capano. J. Electron. Mater., 38, 574 (2009)
- M. Nakamura,Y. Hashino, T. Furusho, H. Kinoshita, H. Shiomi, M. Yoshimoto. Mater. Sci. Forum, 600--603, 967 (2009)
- P.A. Ivanov, N.D. Ilinskaya, A.S. Potapov, T.P. Samsonova, A.V. Afanasyev, V.A. Ilin. FTP, 47, 83 (2013). (in Russian)
- H. Ohyama, K. Takakura, T. Watanabe, K. Nishiyama, K. Shigaki, T. Kudou, M. Nakabayashi, S. Kuboyama, S. Matsuda, C. Kamezawa, E. Simoen, C. Claey. J. Mater. Sci.: Mater. Electron., 16, 455 (2005)
- L.Y. Liu, T.L. Shen, A. Liu, T. Zhang, S. Bai, S.R. Xu, P. Jin, Y. Hao, X.P. Ouyang. Diamond Relat. Mater., 88, 256 (2018)
- S. Ganiyev 1, M. Azim Khairi, D. Ahmad Fauzi, Y. Abdullah, N.F. Hasbullah. Semicnd, 51, 1721 (2017)
- P. Hazdra, S. Popelka, A. Schoner. IEEE Trans. Electron Dev., 65, 4483 (2018)
- R.L. Gao, X. Du, W.Y. Ma, B. Sun, J.L. Ruan, X. Ouyang, H. Li, L. Chen, L.Y. Liu, X.P. Ouyang. Sensors Actuators A: Physical, 333, 113241 (2022).
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