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Non-annealed ohmic contacts with reduced resistance to p- and n-type epitaxial layers of diamond and their thermal stability
Russian version
Arkhipova E. A.1, Drozdov M. N.1, Kraev S. A.1, Khrykin O. I.1, Okhapkin A. I.1, Lobaev M. A.2, Vikharev A. L.2, Isaev V. A.2, Bogdanov S. A.2
1Institute for Physics of Microstructures, Russian Academy of Sciences, Nizhny Novgorod, Russia
2Institute of Applied Physics, Russian Academy of Sciences, Nizhny Novgorod, Russia
Email: suroveginaka@ipmras.ru
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The possibility of decreasing the resistivity of ohmic contact to p- and n-type diamond epitaxial layers by using heavily boron- and phosphorus-alloyed layers, variation of different materials for metallization and annealing of contacts has been investigated. Two types of ohmic contacts have been studied: Ti/Mo/Au and Ti/Pt/Au. The use of platinum as a diffusion barrier in a three-layer system made it possible to reduce the specific contact resistance to p-type diamond by an order of magnitude compared to molybdenum to 2.7·10-6 Ohm · cm2, which maintains stability during high-temperature annealing. A specific resistance of ohmic contacts to n-type diamond of 0.02 Ohm · cm2 has been achieved. The current-voltage characteristic of the resulting contacts is linear. Keywords: epitaxial layers of diamond, boron, phosphorus, ohmic contacts.
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