Influence of etching modes on the morphology and composition of the surface of multilayer porous silicon
Lenshin A. S.1,2, Peshkov Ya. A.1, Chernousova O. V.2, Barkov K. A.1, Kannykin S. V.1
1Voronezh State University, Voronezh, Russia
2Voronezh State University of Engineering Technologies, Voronezh, Russia
Email: lenshinas@mail.ru

PDF
Based on X-ray reflectometry and ultrasoft X-ray spectroscopy data, the opportunity of controlling surface porosity using multi-stage electrochemical etching modes is presented. It is presented how, with an increase in the porosity index of the near-surface layer, the morphology changes and the degree of oxidation of multilayer porous silicon samples increases. Keywords: porous silicon, X-ray reflectometry, porosity.
  1. L. Canham. Handbook of Porous Silicon (Springer, C.H., 2014) p. 733. DOI: 10.1007/978-3-319-05744-6
  2. C. Pacholski. Sensors, 13, 4694 (2013). DOI: 10.3390/s130404694
  3. R. Moretta, L. De Stefano, M. Terracciano, I. Rea. Sensors, 21, 1336 (2021). DOI: 10.3390/s21041336
  4. L.T. Canham. Appl. Phys. Lett., 57, 1046 (1990). DOI: 10.1063/1.103561
  5. P.V. Seredin, A.S. Lenshin, A.M. Mizerov, H. Leiste, M. Rinke. Appl. Surf. Sci., 476, 1049 (2019). https://doi.org/10.1016/j.apsusc.2019.01.239
  6. S. Asgharizadeh, M. Sutton, K. Robbie, T. Brown. Phys. Rev. B, 79, 125405 (2009). DOI: 10.1103/PhysRevB.79.125405
  7. M. Servidori, C. Ferrero, S. Lequien, S. Milita, A. Parisini, R. Romestain, S. Sama, S. Setzu, D. Thiaudiere. Solid State Commun., 118, 85 (2001). DOI: 10.1016/S0038-1098(01)00036-9
  8. L.A. Balagurov, V.F. Pavlov, E.A. Petrova, G.P. Boronina. Semiconductors, 31, 815 (1997). DOI: 10.1134/1.1187259
  9. A.S. Lenshin, A.N. Lukin, Ya.A. Peshkov, S.V. Kannykin, B.L. Agapov, P.V. Seredin, E.P. Domashevskaya. Condens. Matter Interphases, 23, 41 (2021). DOI: 10.17308/kcmf.2021.23/3300
  10. A.S. Lenshin, Ya.A. Peshkov, M.V. Grechkina, S.V. Kannykin, Yu.A. Yurakov. J. Phys.: Conf. Ser., 1984, 012018 (2021). DOI: 10.1088/1742-6596/1984/1/012018
  11. D. Buttard, G. Dolino, D. Bellet, T. Baumbach, F. Rieutord. Solid State Commun., 109, 1 (1998). DOI: 10.1016/S0038-1098(98)00531-6
  12. A. Lenshin, Ya. Peshkov, K. Velichko, S. Kannykin. Int. Conf. on Information Technology and Nanotechnology (ITNT) (20-24 September 2021, Samara, Russian Federation, 1 (2021). DOI: 10.1109/ITNT52450.2021.9649173
  13. A.S. Lenshin, V.M. Kashkarov, E.P. Domashevskaya, A.N. Bel'tyukov, F.Z. Gil'mutdinov. Appl. Surf. Sci., 359, 550 (2015)

Подсчитывается количество просмотров абстрактов ("html" на диаграммах) и полных версий статей ("pdf"). Просмотры с одинаковых IP-адресов засчитываются, если происходят с интервалом не менее 2-х часов.

Дата начала обработки статистических данных - 27 января 2016 г.

Publisher:

Ioffe Institute

Institute Officers:

Director: Sergei V. Ivanov

Contact us:

26 Polytekhnicheskaya, Saint Petersburg 194021, Russian Federation
Fax: +7 (812) 297 1017
Phone: +7 (812) 297 2245
E-mail: post@mail.ioffe.ru