Theoretical analysis of compositional profiles in axial heterostructures based on AlGaAs nanowires
Dubrovskii V. G.1, Mikushev S. V.1, Shtrom I. V.1,2
1St. Petersburg State University, St. Petersburg, Russia
2Institute for Analytical Instrumentation of the Russian Academy of Sciences, Saint Petersburg, Russia
Email: i.shtorm@spbu.ru
We analyze the compositional profiles across axial heterostructures in GaAs/AlxGa1-xAs/GaAs and AlxGa1-xAs/GaAs/AlxGa1-xAs nanowires (NWs). The difference is in the catalyst type (Ga or Au) and in the material from which the heterostructure starts (binary GaAs NW or ternary AlxGa1-xAs NW). We calculate the interfacial profiles and show that the use of Au catalyst significantly broadens the interface due to reservoir effect. This feature is experimentally confirmed. Keywords: semiconductor nanowires AlGaAs, axial heterostructures, compositional profiles, modeling.
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Дата начала обработки статистических данных - 27 января 2016 г.