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Mechanisms of fluorocarbon film destruction during atomic layer etching of silicon dioxide
A. A. Solovykh1,2, E. N. Voronina
1,2, Yu. A. Mankelevich
1, L.S. Novikov
1
1Lomonosov Moscow State University, Skobeltsyn Institute of Nuclear Physics, Moscow, Russia
2Department of Physics, M.V. Lomonosov Moscow State University. Moscow , Russia
2Department of Physics, M.V. Lomonosov Moscow State University. Moscow , Russia
Email: voroninaen@nsrd.sinp.msu.ru
This paper describes the results of quantum-mechanical DFT modeling of elementary physical and chemical processes of fluorocarbon film damage and removal during plasma-assisted atomic layer etching of silicon dioxide. The energy parameters of the chemical reactions involved are determined, which has important practical implications for improving VLSI manufacturing technology.. Keywords: plasma, atomic layer etching, fluorocarbon film, ions, radicals, modelling.
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