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Radioisotope power source based on artificial diamond activated by carbon isotope and InGaP-photoconverter
Russian version
Kalinovskii V. S.1, Burakov B. E.1, Kontrosh E.V.1, Bocharov S. N.2, Prudchenko K.K.1, Tolkachev I. A.1, Zamoryanskaya M.V.1
1Ioffe Institute, St. Petersburg, Russia
2Crystallyne ltd, Saint Petersburg, Russia
Email: vitak.sopt@mail.ioffe.ru, Burakov@mail.ioffe.ru, kontrosh@mail.ioffe.ru, bocharovsergei@mail.ru, prudchenkokk@mail.ioffe.ru, tolkachevia@mail.ioffe.ru, Zam@mail.ioffe.ru
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A prototype of a radioisotope power source has been created based on a self-glowing (450-550 nm) single-crystal diamond 12C:(14C), enriched with the carbon isotope 14C, and p-n photoconverter based on InGaP. With a diamond self-luminescence power density of ~ 0.8 nW/cm2, the photoconverter provided an output electrical power of 16.5· 10-12 W/cm2. The prospects for improving the optical radiation intensity of diamond, which will provide an output electrical power density of up to ~ 1 nW/cm2, are investigated. Keywords: radioisotope power source, self-glowing single-crystal diamond, carbon isotope, InGaP-based p-n photoconverter, diamond optical radiation intensity.
  1. N. Gupta, A. Khandelwal, S. Maheshwari, IEEE Sensors J., 23, 27096 (2023). DOI: 10.1109/JSEN.2023.3318574
  2. Y. Zhou, M. Shen, X. Cui, Y. Shao, L. Li, Y. Zhang, Nano Energy, 84, 105887 (2021). DOI: 10.1016/j.nanoen.2021.10
  3. N.A.A. Qasem, G.A.Q. Abdulrahman, Int. J. Energy Res., 2024, 7271748 (2024). DOI: 10.1155/2024/7271748
  4. S.I. Maximenko, AIP Adv., 13, 105021 (2023). DOI: 10.1063/5.0162635
  5. M.V. Zamoryanskaya, E.V. Dementeva, K.N. Orekhova, V.A. Kravets, A.N. Trofimov, G.A. Gusev, I. Ipatova, B.E. Burakov, Mater. Res. Bull., 142, 111431 (2021). DOI: 10.1016/j.materresbull.2021.111431
  6. G.H. Miley, B. Ulmen, P.D. Desai, S. Moghaddam, R.I. Masel, in Proc. of 7th Int. Energy Conversion Engineering Conf. (Denver, Colorado, 2009), p. 25. DOI: 10.2514/6.2009-4601
  7. E.B. Agyekum, J. Energy Storage, 122, 116701 (2025). DOI: 10.1016/j.est.2025.116701
  8. S.I. Maximenko, J.E. Moore, C.A. Affouda, P.P. Jenkins, Sci. Rep., 9, 10892 (2019). DOI: 10.1038/s41598-019-47371-6
  9. V.S. Bormashova, S.Yu. Troschiev, S.A. Tarelkin, A.P. Volkov, D.V. Teteruk, A.V. Golovanov, M.S. Kuznetsov, N.V. Kornilov, S.A. Terentiev, V.D. Blank, Diam. Relat.Mater., 84, 41 (2018). DOI: 10.1016/j.diamond.2018.03.006
  10. K.K. Prudchenko, I.A. Tolkachev, E.V. Kontrosh, E.A. Silantieva, V.S. Kalinovskii, Tech. Phys., 67 (12), 1632 (2022). DOI: 10.21883/TP.2022.12.55199.199-22
  11. M.V. Zamoryanskaya, E.V. Dementeva, K.N. Orekhova, V.A. Kravets, A.N. Trofimov, G.A. Gusev, I. Ipatova, B.E. Burakov, Mater. Res. Bull., 142, 111431 (2021). DOI: 10.1016/j.materresbull.2021.111431
  12. A.Y. Maslov, O.V. Proshina, Semiconductors, 43 (7), 841 (2009). DOI: 10.1134/S1063782609070033
  13. P.V. Seredin, Izv. Samara Scientific Center of RAS 11 (3), 46 (2009)
  14. V.P. Khvostikov, V.S. Kalinovskii, S.V. Sorokina, O.A. Khvostikova, V.M. Andreev, Tech. Phys. Lett., 45 (12), 1197 (2019). DOI: 10.1134/S1063785019120083
  15. B.E. Burakov, S.N. Bocharov, S.V. Shulepov, patent RU 2660872 C1 (2018). https://patentscope.wipo.int/search/en/ detail.jsf?docId=WO2018222083\&tab=PCTBIBLIO
  16. V.A. Kravets, S.N. Bocharov, B.E. Burakov, K.N. Orekhova, E.V. Dementeva, G.A. Gusev, P.A. Dementev, B.Ya. Ber, D.Yu. Kasantsev, M.V. Tokarev, E.A. Vasilev, M.V. Zamoryanskaya, Diam. Relat. Mater., 164, 113492 (2026). DOI: 10.1016/j.diamond.2026.113492
  17. T. Shao, F. Lyu, X. Guo, J. Zhang, H. Zhang, X. Hu, A.H. Shen, Carbon, 167, 888 (2020). DOI: 10.1016/j.carbon.2020.05.061
  18. S.N. Bocharov, B.E. Burakov, A.I. Isakov, K.N. Orekhova, E.V. Dementeva, M.V. Zamoryanskaya, P.A. Dementev, B.Y. Ber, D.Yu. Kasantsev, M.V. Tokarev, Y.Yu. Petrov, Diam. Relat. Mater., 141, 110650 (2024). DOI: 10.1016/j.diamond.2023.110650
  19. W. Shockley, H.J. Quesser, J. Appl. Phys., 32, 510 (1961). DOI: 10.1063/1.1736034
  20. V.M. Andreev, V.V. Evstropov, V.S. Kalinovsky, V.M. Lantratov, V.P. Khvostikov, Semiconductors, 43 (5), 644 (2009). DOI: 10.1134/S1063782609050200
  21. S.N. Bocharov, B.E. Burakov, G.A. Gusev, E.V. Dementyeva,M.V. Zamoryanskaya, V.S. Kalinovsky, E.V. Kontrosh, V.A. Kravets, K.N. Orekhova, K.K. Prudchenko, I.A. Tolkachev, A.N. Trofimov, V.M. Andreev, invention patent RU (11) 2 854 307 (13) C1 (2025)

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