Heterointerface width in InGaAs/InAlAs/InP heterostructures for quantum cascade lasers grown by molecular beam epitaxy
Papylev D.S.1, Novikov I.I.1,2, Andryushkin V.V.1,2, Gladyshev А. G.2, Dudelev V. V.3, Karachinsky L. Ya.1,2, Babichev A. V.1, Nyapshaev I. A.3, Yunin P. A.4, Egorov A. Yu.2,3, Sokolovskii G. S3
1ITMO University, St. Petersburg, Russia
2Connector Optics LLC, St. Petersburg, Russia
3Ioffe Institute, St. Petersburg, Russia
4Institute for Physics of Microstructures, Russian Academy of Sciences, Nizhny Novgorod, Russia
Email: dspapylev@itmo.ru
The width of heterointerfaces in strain-compensated In0.36Al0.64As/In0.67Ga0.33As heterostructures for quantum cascade lasers grown by molecular beam epitaxy on InP (001) substrates with various-thickness In0.53Ga0.47As buffer layers was investigated by X-ray reflectometry. It was found that reducing the buffer layer thickness from 500 to 100 nm does not degrade the quality of the formed heterostructures and maintains the heterointerface width at a level not exceeding one monolayer ≤ 0.35 nm). Keywords: quantum cascade laser, heterostructure, heterointerface width, molecular beam epitaxy, X-ray reflectometry.
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