Technical Physics Letters
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Regular arrays of triple InAs/GaAs quantum dots in a triangular arrangement
Balakirev S. V.
1, Kirichenko D. V.
1, Solodovnik N. E.
1, Shandyba N. A.
1, Dukhan D. D.
1, Eremenko M. M.
1, Solodovnik M. S.
1
1Institute of Nanotechnologies, Electronics and Equipment Engineering, Southern Federal University, Taganrog, Russia
Email: sbalakirev@sfedu.ru, solodovnikms@sfedu.ru
The study presents a novel approach for the epitaxial growth of ordered arrays of triple quantum dots arranged in a triangular configuration. The proposed method involves preliminary patterning of GaAs(111)B substrates using a combination of focused ion beams and local droplet etching followed by depositing InAs via molecular beam epitaxy. Optimization of the technological parameters allows for high selectivity and yield of triple quantum dots within the array, as well as for control over the inter-dot distances. Keywords: molecular beam epitaxy, focused ion beams, nanopatterning, quantum dots.
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