Studies of electroluminescence spectra of HgCdTe quantum well structures under lateral current pumping
Utochkin V. V.1, Rumyatsev V. V.1, Fadeev M. A.1, Razova A. A.1,2, Mazhukina K. A.1, Yantser A. A.1, Gavrilenko V. I.1,2, Kraev S. A.1, Arkhipova E. A.1, Okomelkov A. V.1, Mikhailov N. N.3, Dvoretsky S. A.3, Morozov S. V.1
1Institute for Physics of Microstructures, Russian Academy of Sciences, Nizhny Novgorod, Russia
2Lobachevsky State University, Nizhny Novgorod, Russia
3Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences, Novosibirsk, Russia
We study a HgCdTe heterostructure with multiple quantum wells as a possible source for NDIR spectroscopy. It is shown that during lateral current pumping, as a result of injection of hot carriers from contacts, interband spontaneous emission is observed at temperatures up to room one. We investigate the current voltage characteristics for the structures and determine the dominant mechanism of generation of nonequilibrium carriers under conditions of lateral current pumping. Keywords: HgCdTe, NDIR, quantum well, IR.
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