Malevskaya A. D.1, Mintairov M. A.1, Evstropov V. V.1, Malevskiy D. A.1, Kalyuzhnyy N. A.1
1Ioffe Institute, St. Petersburg, Russia
Email: anmalevskaya@mail.ioffe.ru, mamint@mail.ioffe.ru, vvevstropov@gmail.com, dmalevsky@scell.ioffe.ru, Nickk@mail.ioffe.ru
In this paper improved three-parameter model for calculating the IV-curves of photovoltaic converters is proposed. The model is based on dividing the solar cell into current tubes, each of which contains a p-n-junction and three resistances - vertical, lateral and an additionally introduced. To determine the model parameters, dark IV-curves and electroluminescence (EL) maps obtained by passing current through the edge of the upper contact grid of a solar cell are used. Using the model, the experimental characteristics of two Ga0.79In0.21As photovoltaic converters with different current collection bus geometries were analyzed and it was shown that the model allows one to describe experimental IV-curves and determine parameters characterizing the quality of the contact grid. Keywords: Photovoltaic converters, solar cells, spreading resistance, contact resistance.
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