Temperature dependence of the carrier removal rate in 4H-SiC
Davydov S.Yu1, Davydovskaya K.S.1, Kozlovski V.V.2, Lebedev A.A.1
1Ioffe Institute, St. Petersburg, Russia
2Peter the Great Saint-Petersburg Polytechnic University, St. Petersburg, Russia
Email: sergei_davydov@mail.ru, davidovskaya.klava@mail.ioffe.ru, kozlovski@physics.spbstu.ru, shura.lebe@mail.ioffe.ru

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The temperature dependence of the rate of carrier removal in 4H-SiC upon irradiation with electrons (0.9 meV) and protons (15 meV) is considered. It was found that this dependence is exponential in nature with activation energies of 49-76 meV. It is shown that these values are close to the energies of acoustic phonons in SiC. It has been suggested that acoustic phonons can stimulate the process of annealing of radiation defects. Keywords: irradiation with electrons and protons, annihilation of structural defects, acoustic phonons.
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