Detection of paramagnetic recombination centers on the surface of silicon wafers
Vlasenko L. S. 1
1Ioffe Institute, St. Petersburg, Russia
Email: Leovlas@solid.ioffe.ru
The electron paramagnetic resonance spectra of centers localized on the (111), (110), and (100) oriented surfaces of silicon wafers were observed and investigated using the spin dependent recombination change in microwave photoconductivity of samples. It was shown that dominant recombination centers created after natural oxidization on air at room temperature on the (111)- and (110)-surfaces are the silicon dangling bond centers, so called Pb-centers. On (100)-surface the pairs of dangling bonds are responsible for spin dependent recombination. The optimal experimental conditions such as microwave power, light intensity, and temperature were discussed for detection of surface recombination centers with higher sensitivity compared to usual electron paramagnetic resonance method. Keywords: silicon, surface, spin dependent recombination, electron paramagnetic resonance.
- P.M. Lenahan, M.A. Jupina. Colloid. Surf., 45, 191 (1990)
- M. Lannoo. Revue Phys. Appl., 25, 887 (1990)
- P.M. Lenahan, J.F. Conley, jr. J. Vac. Sci. Technol. B, 16 (4), 2134 (1998)
- C.R. Helms, E.H. Pointdexter. Rep. Progr. Phys., 57, 791 (1994)
- E.H. Poindexter, P.J. Caplan, B.E. Deal, R.R. Razouk. J. Appl. Phys., 52 (2), 879 (1981)
- K.L. Brower. Semicond. Sci. Technol., 4, 970 (1989)
- K.L. Brower. Phys. Rev. B, 33 (7), 4471 (1986)
- K.L. Brower. Phys. Rev. B, 38 (14), 9657 (1988)
- A. Stesmans, V.V. Afanas'ev. J. Appl. Phys., 83 (5), 2449 (1998)
- L.S. Vlasenko, M.P. Vlasenko, V.N. Lomasov, V.A. Khramtsov. ZhETF 91, 1037 (1986). (in Russian)
- L.S. Vlasenko. FTT, 41 (5), 774 (1999). (in Russian)
- L.S. Vlasenko. Appl. Magn. Reson., 47, 813 (2016)
- L.S. Vlasenko, M.P. Vlasenko, V.A. Kozlov, V.V. Kozlovskii. FTP, 33 (10), 1164 (1999). (in Russian)
- D. P. Franke, M. Otsuka, T. Matsuoka, L. S. Vlasenko, M.P. Vlasenko, M.S. Brandt, K.M. Itoh. Appl. Phys. Lett., 105, 112111 (2014)
- P.A. Mortemouque, T. Sekiguchi, C. Culan, M.P. Vlasenko, R.G. Elliman, L.S. Vlasenko, K.M. Itoh. Appl. Phys. Lett., 101, 082409 (2012)
- H. Saito, S. Hayashi, Y. Kusano, K.M. Itoh, M.P. Vlasenko, L.S. Vlasenko. J. Appl. Phys., 123, 161582 (2018)
- Elias B. Frantz, Nicholas J. Harmon, David J. Michalak, Eric M. Henry, Michael E. Flatte, Sean W. King, James S. Clarke, Patrick M. Lenahan. J. Appl. Phys., 130, 234401 (2021)
- Kenneth J. Myers, Patrick M. Lenahan, James P. Ashton, Jason T. Ryan. J. Appl. Phys., 132, 115301 (2022)
- C.J. Cochrane, P.M. Lenahan. J. Appl. Phys., 112, 123714 (2012)
- Corey J. Cochrane, Jordana Blacksberg, Mark A. Anders, Patrick M. Lenahan. Sci. Reports, 6, 37077 (2016)
- Hesham Okeil, Gerhard Wachutka. Appl. Phys. Lett., 124, 192101 (2024)
- S.A. Kukushkin, A.V. Osipov. Kondensirovannye sredy i mezhfaznye granitsy, 24 (4), 407 (2022). (in Russian)
- M.A. Anders, P.M. Lenahan, C.J. Cochrane, Johan van Tol. J. Appl. Phys., 124, 215105 (2018)
- L.S. Vlasenko, I.S. Fedosov. Pis'ma ZhTF, 50 (9), 3 (2024). (in Russian)
- G. Bemski. J. Appl. Phys., 30 (8), 1195 (1959)
- K.L. Brower. Phys. Rev. B, 4 (6), 1968 (1971)
- T.A. Pagava, N.I. Maisuradze, M.G. Beridze. FTP, 45 (5), 582 (2011). (in Russian)
- M. Morita, T. Ohmi, E. Hasegawa, M. Kawakami, M. Ohwada. J. Appl. Phys., 68 (3), 1272 (1990)
- J. Vertz, J. Bolton. Teoriya i prakticheskie prilozheniya metoda EPR (M., Mir, 1975) ch. 10
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