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Analysis of stability of generation in quantum well lasers
Sokolova Z. N.
1, Asryan L. V.
2
1Ioffe Institute, St. Petersburg, Russia
2Virginia Polytechnic Institute and State University, Blacksburg, USA
2Virginia Polytechnic Institute and State University, Blacksburg, USA
Email: zina.sokolova@mail.ioffe.ru, asryan@vt.edu
A stability analysis of two modes of generation in semiconductor quantum well lasers is performed. These modes correspond to two solutions of the rate equations obtained by taking into account the internal optical loss that depends on the density of charge carriers injected into the laser waveguide region and, hence, on the injection current. It is shown that, in contrast to the first ("conventional") mode of generation, which is always stable and hence observable, the second ("additional") mode, which is entirely due to the internal loss that depends on the carrier density, is unstable and hence cannot be observed under the steady-state conditions in the laser structure considered in this work. Keywords: semiconductor lasers with low-dimensional active region, internal optical loss, linear analysis of stability.
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