Theoretical estimates of the thermoelectric power factor of graphene encapsulated between 3D and 2D semiconductor and metal slabs
S. Yu. Davydov1, O. V. Posrednik 2
1Ioffe Institute, St. Petersburg, Russia
2St. Petersburg State Electrotechnical University “LETI", St. Petersburg, Russia
Email: Sergei_Davydov@mail.ru, ovposrednik@etu.ru
The conditions of extremeness of the conductivity, the Seebeck coefficient and the thermoelectric power factor values of encapsulated graphene, considered as a functions of the chemical potential, are determined. 3D and 2D semiconductors and transition metals are considered as slabs. The use of simple models allowed us to obtain analytical results. Numerical estimates were performed for bulk Si, Ge and 16 binary III-V and II-VI compounds, six two-dimensional semiconductor transition metal dichalcagenides and all elements of the 3d-, 4d- and 5d-series. Recommendations of slab materials allowing to maximize thermoelectric characteristics are given. Encapsulated two-layer graphene is also briefly discussed. Keywords: thermoelectric characteristics, encapsulated graphene, 3D semiconductors, 2D transition metal dichalcagenides, 3D and 2D transition metals.
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