Technical Physics Letters
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- 2022
The effect of surface traps on the static characteristics and the saturation current spread in the channel of GaN HEMTs
Tikhomirov V. G.
1, Chizhikov S. V.
2, Gudkov A. G.
2, Ustinov V. M.3
1St. Petersburg State Electrotechnical University “LETI", St. Petersburg, Russia
2Bauman Moscow State Technical University, Moscow, Russia
3Submicron Heterostructures for Microelectronics, Research & Engineering Center, RAS, Saint-Petersburg, Russia
2Bauman Moscow State Technical University, Moscow, Russia
3Submicron Heterostructures for Microelectronics, Research & Engineering Center, RAS, Saint-Petersburg, Russia
Email: greenbob54@gmail.com, chigikov95@mail.ru, profgudkov@gmail.com, vmust@beam.ioffe.ru
The article discusses the method of neutralization of surface traps in the structures of gallium nitride transistors with high electron mobility (GaN HEMT), based on the use of step-by-step temperature exposure - thermal training. Calculations and experimental studies of the effect of traps on the static characteristics of GaN HEMT have been carried out, and effective ways of dealing with traps have been proposed, in particular, using the proposed optimal thermal training modes. Keywords: surface traps, HEMT, GaN.
- I. Daumiller, D. Theron, C. Gaquiere, A. Vescan, R. Dietrich, A. Wieszt, H. Leier, R. Vetury, U.K. Mishra, I.P. Smorchkova, S. Keller, N.X. Nguyen, C. Nguyen, E. Kohn, IEEE Electron Dev. Lett., 22 (2), 62 (2001). DOI: 10.1109/55.902832
- V.G. Tikhomirov, A. Gudkov, V. Petrov, S. Agasieva, A. Zybin, V. Yankevich, A. Evseenkov, in Proc. of the 2017 11th Int. Workshop on the electromagnetic compatibility of integrated circuits (EMCCompo) (IEEE, 2017), p. 115. DOI: 10.1109/EMCCompo.2017.7998094
- K.S. Zhuravlev, T.V. Malin, V.G. Mansurov, O.E. Tereshenko, K.K. Abgaryan, D.L. Reviznikov, V.E. Zemlyakov, V.I. Egorkin, Ya.M. Parnes, V.G. Tikhomirov, I.P. Prosvirin, Semiconductors, 51 (3), 379 (2017). DOI: 10.1134/S1063782617030277
- V.G. Tikhomirov, V.E. Zemlyakov, V.V. Volkov, Ya.M. Parnes, V.N. Vyuginov, W.V. Lundin, A.V. Sakharov, E.E. Zavarin, A.F. Tsatsulnikov, N.A. Cherkashin, M.N. Mizerov, V.M. Ustinov, Semiconductors, 50 (2), 244 (2016). DOI: 10.1134/S1063782616020263
- M. Faqir, G. Verzellesi, F. Fantini, F. Danesin, F. Rampazzo, G. Meneghesso, E. Zanoni, A. Cavallini, A. Castaldini, N. Labat, A. Touboul, C. Dua, Microelectron. Reliab., 47 (9), 1639 (2007). DOI: 10.1016/j.microrel.2007.07.005
- R. Yeluri, B.L. Swenson, U.K. Mishra, J. Appl. Phys., 111 (4), 043718 (2012). DOI: 10.1063/1.3687355
- S.M. Sze, K.K. Ng, Physics of semiconductor devices, 3rd ed. (Wiley, 2007), p. 763
- W. Lu, V. Kumar, R. Schwindt, E. Piner, I. Adesida, Solid-State Electron., 46 (9), 1441 (2002). DOI: 10.1016/S0038-1101(02)00089-8
- R. Vetury, N.Q. Zhang, S. Keller, U.K. Mishra, IEEE Trans. Electron Dev., 48 (3), 560 (2001). DOI: 10.1109/16.906451
- A.V. Vertiatchikh, L.F. Eastman, W.J. Schaff, T. Prunty, Electron. Lett., 38 (8), 388 (2002). DOI: 10.1063/1.5027634
- S. Sarkar, R.P. Khade, N. DasGupta, A. DasGupta, in 2021 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symp. (BCICTS) (IEEE, 2021), p. 1--4. DOI: 10.1109/BCICTS50416.2021.9682496
- X. Lu, S. Feng, S. Pan, X. Li, K. Bai, H. Zhu, IEEE Trans. Dev. Mater. Reliab., 23 (2), 257 (2023). DOI: 10.1109/TDMR.2023.3253957
- Q. Meng, Q. Lin, W. Jing, N. Zhao, P. Yang, D. Lu, Micromachines, 13 (5), 791 (2022). DOI: 10.3390/mi13050791
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