Features of the iron charge states in semi-insulating β-Ga2O3:Fe identified by high-frequency electron paramagnetic resonance
Babunts R. A.1, Gurin A. S.1, Edinach E. V.1, Uspenskaya Yu. A.1, Baranov P. G.1
1Ioffe Institute, St. Petersburg, Russia
Email: yulia.uspenskaya@mail.ioffe.ru

PDF
The charge states of non-Kramers Fe2+ ions and Fe3+ ions in the octahedral and tetrahedral positions of the crystal lattice in a commercial substrate of semi-insulating gallium oxide β-Ga2O3 before and after proton irradiation with an energy of 15 MeV have been identified by high-frequency EPR. Keywords: electron paramagnetic resonance (EPR), semiconductors, gallium oxide.
  1. S.J. Pearton, J. Yang, P.H. Cary, F. Ren, J. Kim, M.J. Tadjer, M.A. Mastro, Appl. Phys. Rev., 5, 011301 (2018). DOI: 10.1063/1.5006941
  2. S.J. Pearton, F. Ren, M. Tadjer, J. Kim, J. Appl. Phys., 124, 220901 (2018). DOI: 10.1063/1.5062841
  3. M. Baldini, Z. Galazka, G. Wagner, Mater. Sci. Semicond. Process., 78, 132 (2018). DOI: 10.1016/j.mssp.2017.10.040
  4. Z. Liu, P.-G. Li, Y.-S. Zhi, X.-L. Wang, X.-L. Chu, W.-H. Tang, Chin. Phys. B, 28, 017105 (2019). DOI: 10.1088/1674-1056/28/1/017105
  5. X.H. Chen, F.F. Ren, S.L. Gu, J.D. Ye, Photon. Res., 7, 381 (2019). DOI: 10.1364/PRJ.7.000381
  6. J. Kim, S.J. Pearton, C. Fares, J. Yang, F. Ren, S. Kim, A.Y. Polyakov, J. Mater. Chem. C, 7, 10 (2019). DOI: 10.1039/C8TC04193H
  7. S.J. Pearton, A. Aitkaliyeva, M. Xian, F. Ren, A. Khachatrian, A. Ildefonso, Z. Islam, M.A.J. Rasel, A. Haque, A.Y. Polyakov, J. Kim, ECS J. Solid State Sci. Technol., 10, 055008 (2021). DOI: 10.1149/2162-8777/abfc23
  8. E. Ahmadi, Y. Oshima, J. Appl. Phys., 126, 160901 (2019). DOI: 10.1063/1.5123213
  9. M.E. Ingebrigtsen, A.Yu. Kuznetsov, B.G. Svensson, G. Alfieri, A. Mihaila, U. Badstubner, A. Perron, L. Vines, J.B. Varley, APL Mater., 7, 022510 (2019). DOI: 10.1063/1.5054826
  10. A.Y. Polyakov, N.B. Smirnov, I.V. Shchemerov, S.J. Pearton, F. Ren, A.V. Chernykh, A.I. Kochkova, Appl. Phys. Lett., 113, 142102 (2018). DOI: 10.1063/1.5051986
  11. A.T. Neal, S. Mou, S. Rafique, H. Zhao, E. Ahmadi, J.S. Speck, K.T. Stevens, J.D. Blevins, D.B. Thomson, N. Moser, K.D. Chabak, G.H. Jessen, Appl. Phys. Lett., 113, 062101 (2018). DOI: 10.1063/1.5034474
  12. A.Y. Polyakov, N.B. Smirnov, I.V. Schemerov, A.V. Chernykh, E.B. Yakimov, A.I. Kochkova, A.N. Tereshchenko, S.J. Pearton, ECS J. Solid State Sci. Technol., 8, Q3091 (2019). DOI: 10.1149/2.0171907jss
  13. S. Bhandari, M.E. Zvanut, J.B. Varley, J. Appl. Phys., 126, 165703 (2019). DOI: 10.1063/1.5124825
  14. A.Y. Polyakov, N.B. Smirnov, I.V. Shchemerov, A.A. Vasilev, E.B. Yakimov, A.V. Chernykh, A.I. Kochkova, P.B. Lagov, Yu.S. Pavlov, O.F. Kukharchuk, A.A. Suvorov, N.S. Garanin, I.-H. Lee, M. Xian, F. Ren, S.J. Pearton, J. Phys. D: Appl. Phys., 53, 274001 (2020). DOI: 10.1088/1361-6463/ab83c4
  15. R.A. Babunts, A.S. Gurin, E.V. Edinach, H.-J. Drouhin, V.I. Safarov, P.G. Baranov, J. Appl. Phys., 132, 155703 (2022). DOI: 10.1063/5.0102147
  16. C.A. Lenyk, T.D. Gustafson, L.E. Halliburton, N.C. Giles, J. Appl. Phys., 126, 245701 (2019). DOI: 10.1063/1.5133051
  17. T.D. Gustafson, C.A. Lenyk, L.E. Halliburton, N.C. Giles, J. Appl. Phys., 128, 145704 (2020). DOI: 10.1063/5.0021756
  18. E.V. Edinach, Yu.A. Uspenskaya, A.S. Gurin, R.A. Babunts, H.R. Asatryan, N.G. Romanov, A.G. Badalyan, P.G. Baranov, Phys. Rev. B, 100, 104435 (2019). DOI: 10.1103/PhysRevB.100.104435
  19. R.A. Babunts, A.G. Badalyan, A.S. Gurin, N.G. Romanov, P.G. Baranov, A.V. Nalivkin, L.Yu. Bogdanov, D.O. Korneev, Appl. Magn. Reson., 51, 1125 (2020). DOI: 10.1007/s00723-020-01235-9
  20. S. Stoll, A. Schweiger, J. Magn. Reson., 178, 42 (2006). DOI: 10.1016/j.jmr.2005.08.013

Подсчитывается количество просмотров абстрактов ("html" на диаграммах) и полных версий статей ("pdf"). Просмотры с одинаковых IP-адресов засчитываются, если происходят с интервалом не менее 2-х часов.

Дата начала обработки статистических данных - 27 января 2016 г.

Publisher:

Ioffe Institute

Institute Officers:

Director: Sergei V. Ivanov

Contact us:

26 Polytekhnicheskaya, Saint Petersburg 194021, Russian Federation
Fax: +7 (812) 297 1017
Phone: +7 (812) 297 2245
E-mail: post@mail.ioffe.ru