Design of tunnel-coupled quantum wells for a Mach--Zehnder scheme modulator construction
Bobrov A. I.
1, Baidus' N.V.
1, khazanova S. V.
2, Gorshkov A. P
2, Sidorenko K. V.
1, Shushunov A. V.
1, Malekhonova N. V.
1, Nezhdanov A. V.
2, Zdoroveyshchev A. V.
1, Trushin V. N.
1, Ubyivovk E. V.
3, Okhapkin A. I.
4, Klement’ev D.S.
2, Gasainiev Z. Sh.
5, Kharlamov A. V.
61Research Institute for Physics and Technology, Lobachevsky State University of Nizhny Novgorod, Nizhny Novgorod, Russia
2Lobachevsky State University, Nizhny Novgorod, Russia
3St. Petersburg State University, St. Petersburg, Russia
4Institute for Physics of Microstructures, Russian Academy of Sciences, Nizhny Novgorod, Russia
5Scientific-Production Enterprise Salyut JSC, Nizhny Novgorod, Russia
6T8 LLC, Moscow, Russia
Email: bobrov@phys.unn.ru, khazanova@phys.unn.ru, Malekhonova@nifti.unn.ru
In this paper, we propose a method for predicting the refractive index variation in InGaAlAs tunnel-coupled quantum wells under the action of an electric field. Complex of mathematical and experimental studies to optimize the heterosystems design forthe semiconductor modulator construction according to a planar Mach-Zehnder interferometer scheme is demonstrated. Keywords: Mach-Zehnder modulator, nanoheterostructure, quantum mechanical calculations, refractive index, transmission electron microscopy, photoelectric spectroscopy.
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