Investigation of the influence of the ion-beam treatment dose of the Si(111) surface on the GaAs nanowires growth processes
Shandyba N. A.1, Chernenko N. E.1, Balakirev S. V.1, Eremenko M. M.1, Kirichenko D. V.1, Solodovnik M. S.1
1Institute of Nanotechnologies, Electronics and Equipment Engineering, Southern Federal University, Taganrog, Russia
Email: shandyba@sfedu.ru
This paper presents the results of experimental studies of the effect of the Ga ion dose during ion-beam treatment of the Si(111) surface using the focused ion beam technique on the Ga+ nanowires epitaxial growth processes. A significant difference is revealed between the parameters of nanowire arrays formed on modified and unmodified areas of the Si substrate in this way. It is shown that changing the Ga ions dose from 0.052 to 10.4 pC/μm2 during ion-beam treatment makes it possible to form GaAs nanowires arrays with a different set of parameters in a single technological cycle with a high degree of localization. The regularities of the influence of the dose of Ga ions during surface modification on the key characteristics of GaAs nanowires (density, diameter, length, and orientation with respect to the substrate surface) are experimentally established. Keywords: Focused ion beam, nanowires, GaAs, molecular beam epitaxy.
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