ФТП, 2010, том 44, выпуск 2

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InGaP/InGaAs Doped-Channel Direct-Coupled Field-Effect Transistors Logic with Low Supply Voltage

Jung-HuiTsai , Wen-ShiungLour *, Tzu-YenWeng +, Chien-MingLi +

Department of Electronic Engineering, National Kaohsiung Normal University,
Kaohsiung 802, Taiwan
* Department of Electrical Engineering, National Taiwan Ocean University,
Keelung, Taiwan
+ Department of Physics, National Kaohsiung Normal University,
Kaohsiung 802, Taiwan

(Получена 2 июня 2009 г. Принята к печати 12 июня 2009 г.)

InGaP/InGaAs doped-channel direct-coupled field-effect transistor logic (DCFL) with relatively low supple voltage is demonstrated by two-dimensional analysis. In the integrated enhancement/depletion-mode transistors, subband and two-dimensional electron gas (2DEG) are formed in the InGaAs strain channels, which substantially increase the channel concentration and decrease the drain-to-source saturation voltage. The integrated devices show high turn-on voltage, high transconductance, broad gate voltage swing, and excellent high frequency performance, simultaneously. Furthermore, the integrated devices exhibit large noise margins for DCFL application with low supply voltage of 1.5 V attributed from the relatively small saturation voltages of the studied integrated devices.

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