ФТП, 2009, том 43, выпуск 7

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High-performance InGaP/GaAs pnp delta-doped heterojunction
bipolar transistor

Jung-HuiTsai , Shao-YenChiu *, Wen-ShiungLour *, Der-FengGuo +

Department of Electronic Engineering, National Kaohsiung Normal University,
Kaohsiung 802, TAIWAN
* Department of Electrical Engineering, National Taiwan Ocean University,
Keelung, TAIWAN
+ Department of Electronic Engineering, Air Force Academy,
Kaohsiung, TAIWAN

(Получена 15 октября 2008 г. Принята к печати 17 ноября 2008 г.)

In this article, a novel InGaP/GaAs pnp delta-doped heterojunction bipolar transistor is first demonstrated. Though the valence band discontinuity at InGaP/GaAs heterojunction is relatively large, the addition of a delta-doped sheet between two spacer layers at the emitter-base (E-B) junction effectively eliminates the potential spike and increases the confined barrier for electrons, simultaneously. Experimentally, a high current gain of 25 and a relatively low E-B offset voltage of 60 mV are achieved. The offset voltage is much smaller than the conventional InGaP/GaAs pnp HBT. The proposed device could be used for linear amplifiers and low-power complementary integrated circuit applications.

PACS: 85.30.Pq, 73.40.Kp

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