ФТП, 2008, том 42, выпуск 3

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Electrical properties of InP/InGaAs pnp heterostructure--emitter
bipolar transistor

Jung-HuiTsai , Wen-ChauLiu *, Der-FengGuo+, Yu-ChiKang, Shao-YenChiu , Wen-ShiungLour

Department of Electronic Engineering, National Kaohsiung Normal University,
116 Ho-ping 1 st Road, Kaohsiung 802, Taiwan
* Institude of Microelectronics, Department of Electrical Engineering, National Cheng-Kung University,
1 University Road, Tainan, Taiwan
+ Department of Electronic Engineering, Air Force Academy,
Kaohsiung, Taiwan
Department of Electrical Engineering, National Taiwan Ocean University,
2 Peining Road, Keelung, Taiwan

(Получена 20 июня 2007 г. Принята к печати 29 июня 2007 г.)

The dc performances of an InP/InGaAs pnp heterostructure-emitter bipolar transistor have been investigated by theoretical analysis and experimental results. Though the valence band discontinuity at InP/InGaAs heterojunction is relatively large, the addition of a heavy-doped as well as thin p+-InGaAs emitter layer between p-InP confinement and n+-InGaAs base layers effectively eliminates the potential spike at emitter--base junction, lowers the emitter--collector offset voltage, and increases the potential barrier for electrons, simultaneously. Experimentally, a high current gain of 88 and a low offset voltage of 54 mV have been achieved.

PACS: 85.30.Pq, 73.40.Kp

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