ФТП, 2007, том 41, выпуск 11

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Transport properties of two-dimensional hole gas in a Ge1-xSix/Ge/Ge1-xSix quantum well in a vicinity of metal--insulator transition

Yu.G.Arapov, V.N.Neverov, G.I.Harus, N.G.Shelushinina, M.V.Yakunin , S.V.Gudina,
I.V.Karskanov, O.A.Kuznetsov *, A.de Visser $, L.Ponomarenko $

Institute of Metal Physics, Ural Branch of Russian Academy of Sciences,
620041 Ekaterinburg, Russia
* Physicotechnical Institute at Nizhnii Novgorod State University,
603600 Nizhnii Novgorod, Russia
$ Van der Waals--Zeeman Institute, University of Amsterdam,
108XE Amsterdam, The Netherlands

(Получена 13 февраля 2007 г. Принята к печати 12 марта 2007 г.)

Observation of a low-temperature transition from metallic (drho/d T>0) to insulator (drho/d T<0) behavior of resisitivity rho(T) induced by a perpendicular magnetic field B is reported for a two-dimensional (2D) hole system confined within Ge layers of a p-Ge1-xSix/Ge/Ge1-xSix heterostructure. Essential feature of this system is that it is described by the Luttinger Hamiltonial with the g-factor highly anisotropic for orientations of magnetic field perpendicular and parallel to the 2D plane (g normal >> g||). The positive magnetoresistance revealed scales as a function of B/T. We attribute this finding to suppression of the triplet channel of electron-electron (hole-hole) interaction due to Zeeman splitting in the hole spectrum.

PACS: 72.20.My, 73.20.Fz, 73.40.Qv, 73.63.Hs

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