| Содержание | Предыдущая статья | Следующая статья | Поиск |
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AFM investigation of thin post-baked photoresistive films for microsystem technology application
S.E.Alexandrov, A.B.Speshilova, Y.V.Soloviev, O.I.Eremeychik
St.Petersburg State Polytechnical University,
195251 St. Petersburg, Russia
Svetlana Electron Devices,
194156 St. Petersburg, Russia
(Получена 12 сентября 2006 г. Принята к печати 3 октября 2006 г.)
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In this paper we discuss the application of photoresist films as the sacrificial layers for \glqq bridge\grqq working elements in microsystem technology. Different regimes and conditions of post-baking and plasma chemical etching processes for forming sacrificial layers with the precise thickness and roughness were investigated. The photoresist surface morphology was observed with help of atomic force and scanning electron microscopy. PACS: 81.05.Lg, 81.65.Kn, 82.35.Gh |
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