ФТП, 2007, том 41, выпуск 4

 Содержание  Предыдущая статья  Следующая статья  Поиск  

Micro- and nano-structures in silicon studied by DLTS
and scanning probe methods

D.Cavalcoli\kern1pt, A.Cavallini, M.Rossi, S.Pizzini\kern1pt*

Physics Dept University of Bologna,
Viale Berti Pichat 6/II, Bologna, Italy
* Material Science Dept University of Milan-Bicocca,
Via Cozzi 53, Milano, Italy

(Получена 12 сентября 2006 г. Принята к печати 3 октября 2006 г.)

Presently there is a high interest in silicon-based optical devices that would render possible the development of fully silicon-based optoelectronics. Being an indirect gap semiconductor, silicon is poorly efficient as light emitter since radiative emission is limited by carrier recombination at non-radiative centers. One of the possible approaches to enhance the radiative emission from Si is the controlled introduction of micro- (dislocations) or nano- (nanocrystals) structures, which, providing quantum confinement of free carriers, prevent their diffusion towards non-radiative channels. Dislocations introduced in silicon by plastic deformation and Si nanocrystals embedded in amorphous silicon matrix have been investigated by junction spectroscopy and scanning probe microscopy methods.

PACS: 61.72.-y, 71.55.Jv, 73.20.Hb, 73.50.Pz

 PDF версия (325Kb)   Другие выпуски  Другие журналы   Помощь 
Copyright (C) 2007, Коллектив авторов  Разработано...  webmaster