ФТП, 2007, том 41, выпуск 4
ФТП, 2007, том 41, выпуск 4
| Содержание | Предыдущая статья | Следующая статья | Поиск |
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Simulation and measurements of EBIC images of photoconductive elements based on HgCdTe
V.V.Krapukhin, P.S.Vergeles, E.B.Yakimov
Joint Stock Company \glqq Moscow Plant << Sapphir>>\grqq,
117545 Moscow, Russia
Institute of Microelectronics Technology and High Purity Materials, Russian Academy of Sciences,
142432 Chernogolovka, Russia
(Получена 12 сентября 2006 г. Принята к печати 3 октября 2006 г.)
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The EBIC investigations of HgCdTe based photoconductive elements have been carried out. Simulation of two-dimensional distribution of EBIC signal is carried out by numerical solution of drift-diffusion ambipolar equation. It is shown that fitting the measured EBIC profiles by simulated ones allows to obtain the effective diffusion length in the element and the surface recombination velocity on its lateral sides. The regions with enhanced recombination rate are reveled in the elements degraded by prolonged annealing at C. The lateral resolution in the EBIC measurements on photoconductive elements is estimated. PACS: 68.37.Hk, 72.80.Ey |
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