ФТП, 2007, том 41, выпуск 4: page 417...

ФТП, 2007, том 41, выпуск 4

Содержание	Предыдущая статья	Следующая статья	Поиск

EBIC characterization of strained Si/SiGe heterostructures

E.B.Yakimov , R.H.Zhang ^*, G.A.Rozgonyi ^*, M.Seacrist ^$

Institute of Microelectronics Technology and High Purity Materials, Russian Academy of Sciences,
142432 Chernogolovka, Russia
^* Department of Materials Science and Engineering, North Carolina State University,
27695 Raleigh, North Carolina, USA
^$ MEMC Electronic Materials,
MO 63376 St. Peters, USA

(Получена 12 сентября 2006 г. Принята к печати 3 октября 2006 г.)

Strained-Si/SiGe heterostructure is studied by the EBIC. The effect of annealing at

800

^oC is investigated. The EBIC images obtained at different beam energies are analyzed. The analysis of images obtained shows that misfit dislocation bunches in the graded SiGe layer could not explain the cross-hatch contrast dependence on

E

_b. Therefore, at least a part of this contrast should be associated with other defects located closer to the depletion region. It is assumed that dislocation trails could play a role of such defects.

PACS: 68.37.Hk, 72.80.Cw

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