ФТП, 2007, том 41, выпуск 4

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Cathodoluminescence investigation of silicon nanowires fabricated by thermal evaporation of SiO

G.Jia\kern1pt$*, T.Arguirov\kern1pt$*, M.Kittler\kern1pt$*, Z.Su\kern1pt$$, D.Yang\kern1pt, J.Sha\kern1pt$$

$ IHP microelectronics, Im Technologiepark 25,
15236 Frankfurt (Oder), Germany
* IHB/BTU Joint Lab, Postfach 101344,
03013 Cottbus, Germany
$$ Department of Physics, Zhejiang University,
Hangzhou 310027, P.R. China
State Key Lab of Silicon Materials, Zhejiang University,
Hangzhou 310027, P.R. China

(Получена 12 сентября 2006 г. Принята к печати 3 октября 2006 г.)

Silicon nanowire samples fabricated by thermal evaporation of SiO powder were investigated by cathodoluminescence. Three main bands were found at low temperatures, namely peak  1 at about 620-650 nm (2.0-1.91 eV), peak  2 at 920 nm (1.35 eV) and peak  3 at 1280 nm (0.97 eV). An additional broad band (peak  4) in the infrared region with its maximum at ~1570 nm (0.79 eV) appears at room temperature. The origins of the emission bands are discussed.

PACS: 78.60.Hk, 78.67.Lt

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