ФТП, 2005, том 39, выпуск 11

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Some Aspects to the RHEED Behaviour of LT-GaAs Growth

AkosNemcsics *,+

* Hungarian Academy of Sciences, Research Institute for Technical Physics and Materials Science,
P.O. Box 49, H-1525 Budapest, Hungary
+ College of Engineering Budapest, Institute of Microelectronics and Technology,
H-1084 Budapest, Hungary

(Получена 3 марта 2005 г. Принята к печати 22 марта 2005 г.)

The RHEED behaviour during MBE growth on GaAs (001) surface under low temperature (LT) growth conditions is examined in this work. The RHEED and its intensity oscillations of LT-GaAs growth have some particular behaviour. The intensity, phase and decay of oscillations depend on the beam equivalent pressure (BEP) ratio and substrate temperature  etc. We examine here the intensity dependence of RHEED behaviour on BEP ratio, substrate temperature and the excess of As content in the layer. The change of the decay constant of the RHEED oscillations is also discussed.

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