ФТП, 2005, том 39, выпуск 3
ФТП, 2005, том 39, выпуск 3
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Spectroscopic parameters of LVM absorption bands of carbon and oxygen impurities in isotopic enriched silicon Si, Si and Si
P.G.Sennikov, T.V.Kotereva, A.G.Kurganov, B.A.Andreev ,
H.Niemann , D.Schiel , V.V.Emtsev , H.-J.Pohl
Institute of Chemistry of High-Purity Substances, Russian Academy of Sciences,
Nizhny Novgorod, Russia
Institute for Physics of Microstructures, Russian Academy of Sciences,
603950 Nizhny Novgorod, Russia
Physikalisch-Technische Bundesanstalt,
Braunschweig, Germany
Ioffe Physicotechnical Institute, Russian Academy of Sciences,
194021 St. Petersburg, Russia
VITCON Projectconsult GmbH,
Jena, Germany
(Получена 4 августа 2004 г. Принята к печати 10 августа 2004 г.)
| The IR spectra of all three Si isotopes in the form of bulk single crystals (Si with enrichment more as 99.9%, Si and Si with enrichment more than 90%) has been studied at , 17 and 5 K in spectral range cm. IR active local vibrational modes (LVM) of the Si-C centered at 605 cm and of Si-O-Si quasi-molecules in region of 1136 cm for all Si isotopes in comparison with Si of natural isotopic composition as well as its isotopic shift at 300 and 17 K have been determined. The dependence of shape of antisymmetric stretching vibration band of Si-O-Si in spectrum of Si on spectral resolution has been studied. The perspectives of generalization of IR spectroscopy method for determination of carbon and oxygen impurities in Si of natural isotopic composition to mono-isotopic Si have been discussed. |
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